Si₂Ni₂Er is a intermetallic compound combining silicon and nickel with erbium, belonging to the rare-earth-doped semiconductor family. This is primarily a research-phase material investigated for potential applications in high-temperature electronics and thermoelectric devices, where the rare-earth dopant (erbium) modifies electronic properties to enhance performance in demanding thermal environments. While not yet established in mainstream industrial production, materials in this compositional family are pursued for next-generation power electronics and specialized optoelectronic applications where conventional semiconductors reach thermal or performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 139.3 | GPa | — | ||
Shear Modulus(G) | 68.49 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00610 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8150 | eV/atom | — |