K₄Si₂As₄ is a quaternary semiconductor compound combining potassium, silicon, and arsenic elements, representing an emerging material in the solid-state chemistry and semiconductor research space. While not yet widely commercialized, this compound belongs to the family of complex semiconductors being investigated for potential optoelectronic and photovoltaic applications where band gap engineering and crystal structure control are priorities. The material's significance lies in its potential to offer tunable electronic properties through its multi-element composition, though practical engineering adoption remains limited pending further development of synthesis and device integration methods.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,580.8 | ksi | — | ||
Shear Modulus(G) | 1,951.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.092 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4960 | eV/atom | — |