Si₂Ge₄N₈ is a ternary semiconductor nitride compound combining silicon, germanium, and nitrogen in a fixed stoichiometric ratio. This material belongs to the wider family of group III–V and mixed-metal nitrides, which are of significant research interest for high-temperature and high-power electronic applications. While not yet widely commercialized, compounds in this material class are investigated for their potential to enable devices operating in extreme environments where conventional semiconductors degrade, as well as for optoelectronic and thermoelectric applications that exploit their tunable bandgap and thermal properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 35,742.1 | ksi | — | ||
Shear Modulus(G) | 29,016.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.650 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2870 | eV/atom | — |