Si₂Dy₁Os₂ is an experimental intermetallic semiconductor compound combining silicon, dysprosium (a rare-earth element), and osmium. This material belongs to the family of rare-earth-transition metal silicides, which are primarily of research interest for their potential in high-temperature electronics and quantum applications rather than established commercial use. The combination of dysprosium's magnetic properties with osmium's high density and refractory characteristics suggests potential applications in specialized semiconductor devices operating under extreme conditions, though this specific composition remains largely in the development phase.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 170.6 | GPa | — | ||
Shear Modulus(G) | 82.27 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000900 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6920 | eV/atom | — |