Si₂C₄ is a silicon carbide-based ceramic compound representing a specific stoichiometry within the silicon carbide family of semiconductors. This material belongs to the broader class of wide-bandgap semiconductors and is primarily of research and development interest rather than a mainstream commercial product. Silicon carbide materials in this composition range are valued for their exceptional hardness, thermal stability, and semiconductor properties, making them candidates for advanced high-temperature electronics, extreme-environment sensing, and next-generation power conversion applications where traditional silicon reaches performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 175.2 | GPa | — | ||
Shear Modulus(G) | 82.08 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02890 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.3640 | eV/atom | — |