Si₂As₆ is a compound semiconductor material composed of silicon and arsenic, belonging to the family of III-V and IV-VI semiconductor compounds. This material is primarily of research interest rather than established commercial production, with potential applications in optoelectronic and high-frequency electronic devices where arsenic-containing semiconductors offer advantages in band gap engineering and carrier mobility.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000800 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.5600 | eV/atom | — |