Si₂As₄Cd₂ is a quaternary semiconductor compound combining silicon, arsenic, and cadmium elements, belonging to the III-V and II-VI semiconductor families. This material is primarily of research interest for optoelectronic and photovoltaic applications, where the combined properties of its constituent elements may enable tunable bandgap characteristics and enhanced light absorption across specific wavelength ranges. While not widely commercialized, compounds in this family are investigated for advanced solar cells, infrared detectors, and solid-state lighting applications where conventional binary or ternary semiconductors have limitations.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,787.7 | ksi | — | ||
Shear Modulus(G) | 4,704 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7356 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.09400 | eV/atom | — |