Si₁₂P₁₂ is a binary semiconductor compound composed of silicon and phosphorus in a 1:1 atomic ratio, belonging to the III-V semiconductor family. This material is primarily investigated in research contexts for optoelectronic and photovoltaic applications, where its direct bandgap and lattice properties offer potential advantages in light emission and absorption compared to conventional silicon. Si₁₂P₁₂ represents an exploratory composition within phosphorus-doped silicon systems, with particular interest in quantum dot structures, nanophotonics, and next-generation solar cell architectures where bandgap engineering and carrier dynamics are critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.244 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1490 | eV/atom | — |