Si10 C10
semiconductorSi₁₀C₁₀ is an experimental silicon carbide (SiC) composite or nanostructured ceramic material combining silicon and carbon in near-equimolar proportions, representing research into advanced hard ceramics and semiconductor compounds. This composition sits at the intersection of silicon carbide and silicon-carbon nanocomposite development, with potential applications in high-temperature structural materials, semiconductor device layers, and extreme-environment components where conventional SiC may be optimized further. The material remains largely in the research phase; its viability depends on synthesis method and resulting crystal structure, making it of interest to materials engineers exploring next-generation ceramic matrix composites and wide-bandgap semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |