Si1 Te2 Os1

semiconductor

· Si1 Te2 Os1

Si₁Te₂Os₁ is an experimental ternary semiconductor compound combining silicon, tellurium, and osmium. This material exists primarily in research contexts as part of the extended family of chalcogenide and metal-doped semiconductors, with potential applications in thermoelectric or optoelectronic devices where the osmium dopant could introduce novel electronic or magnetic properties. Engineers should verify current literature for confirmed synthesis routes and performance data, as this specific composition is not widely commercialized.

thermoelectric devices (research phase)optoelectronic components (experimental)high-temperature semiconductorstransition metal-doped semiconductorsmaterials research and development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	102.7	GPa	—
Shear Modulus(G)	33.82	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00780	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8550	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Si1 Te2 Os1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control