Si₁Sn₃ is a binary intermetallic compound combining silicon and tin in a 1:3 stoichiometric ratio, belonging to the broader class of IV-IV group semiconductors and metallic compounds. This material is primarily of research interest for thermoelectric applications and advanced semiconductor device development, where tin-silicon compounds offer potential advantages in thermal management and energy conversion at moderate temperatures. Si₁Sn₃ represents an exploratory composition within the silicon-tin phase diagram, studied for its electronic structure and potential use in next-generation thermal or optoelectronic devices where conventional Si or Sn alone proves limiting.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00330 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.3310 | eV/atom | — |