Si1 S8 Ga1 Mo4
semiconductorSi1S8Ga1Mo4 is an experimental semiconductor compound combining silicon, sulfur, gallium, and molybdenum—a multi-element system outside conventional commercial semiconductor families. This material belongs to the broader class of complex chalcogenide semiconductors and is primarily of research interest for exploring novel electronic and photonic properties not achievable in binary or ternary compounds. Its practical applications remain exploratory; potential uses include thin-film photovoltaics, optoelectronic devices, or catalytic systems where the mixed-metal sulfide composition could enable tunable bandgaps or enhanced light absorption, though the material is not yet established in production-scale engineering applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |