SiPdO₃ is a ternary oxide semiconductor compound combining silicon, palladium, and oxygen in a stoichiometric ratio. This material is primarily of research and developmental interest rather than established in high-volume industrial production; it belongs to the family of mixed-metal oxides that exhibit semiconductor behavior and potential catalytic or functional properties. Interest in this compound stems from palladium's catalytic activity and silicon's semiconductor framework, positioning it for exploration in sensing, catalysis, or energy conversion applications where the combination of these elements might offer advantages over single-phase alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 238.9 | GPa | — | ||
Shear Modulus(G) | 50.88 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.197 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.313 | eV/atom | — |