Si1 Os1

semiconductor

· Si1 Os1

SiOs (silicon-osmium compound) is an experimental semiconductor material combining silicon with osmium, representing a research-phase intermetallic or compound semiconductor. While not yet established in mainstream industrial production, this material family is of interest for high-temperature electronics and specialized semiconductor applications where the properties of osmium—a dense, refractory transition metal—might enhance thermal stability or electronic performance beyond conventional Si-based devices.

experimental semiconductor researchhigh-temperature electronicsrefractory compound semiconductorsadvanced materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	277.0	GPa	—
Shear Modulus(G)	128.4	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00500	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.2080	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Si1 Os1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control