This compound combines silicon, hydrogen, and oxygen in a 1:2:1 ratio, placing it within the family of siloxane or silicate-based semiconducting materials. While the specific stoichiometry SiH₂O is uncommon in commercial production, it likely represents a research-phase material or a transient phase in silicon oxidation/hydride chemistry relevant to semiconductor processing. The material's interest lies in potential applications at the intersection of silicon device fabrication, where hydrogen and oxygen chemistry governs surface passivation, interfacial quality, and defect control during wafer processing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,518 | ksi | — | ||
Shear Modulus(G) | 869.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000500 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4010 | eV/atom | — |