Si1 C3

semiconductor

· Si1 C3

Si₁C₃ is a silicon carbide (SiC) variant—a ceramic compound semiconductor belonging to the wide-bandgap semiconductor family. This specific stoichiometry represents a research-phase material within the SiC material system, which is valued for its exceptional hardness, thermal stability, and wide bandgap enabling high-temperature and high-power electronics. Silicon carbide compounds are industrially established in power devices and RF applications, with Si₁C₃ representing an experimental composition that may offer refined electrical or thermal properties compared to more common SiC polytypes (e.g., 6H-SiC or 4H-SiC), though its synthesis and reproducibility remain primarily within academic and advanced materials research contexts.

high-temperature semiconductors (research)wide-bandgap power electronicsRF and microwave devicesextreme environment sensorsceramic composite reinforcementadvanced materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	23,718.5	ksi	—
Shear Modulus(G)	14,402.2	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00130	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Si1 C3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control