Si1 C1

semiconductor

· Si1 C1

Silicon carbide (SiC) is a wide-bandgap semiconductor compound combining silicon and carbon, valued for its exceptional hardness, thermal stability, and high-temperature performance. It is widely used in power electronics (MOSFETs, Schottky diodes), RF devices, and high-temperature sensors, where its superior thermal conductivity and voltage breakdown strength enable more efficient and compact designs compared to traditional silicon. In industrial applications, SiC is also employed in abrasives, refractory materials, and wear-resistant components due to its hardness and chemical inertness.

power semiconductors and invertershigh-temperature electronicsRF and microwave devicesautomotive EV powertrainsindustrial abrasives and wear componentsthermal management substrates

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	37,124.9	ksi	—
Shear Modulus(G)	39,879.6	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5414	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5860	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Si1 C1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control