Silicon carbide (SiC) is a wide-bandgap semiconductor compound combining silicon and carbon, valued for its exceptional hardness, thermal stability, and high-temperature performance. It is widely used in power electronics (MOSFETs, Schottky diodes), RF devices, and high-temperature sensors, where its superior thermal conductivity and voltage breakdown strength enable more efficient and compact designs compared to traditional silicon. In industrial applications, SiC is also employed in abrasives, refractory materials, and wear-resistant components due to its hardness and chemical inertness.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 37,124.9 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 39,879.6 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.5414 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.5860 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data