Si1Bi3 is a bismuth-silicon intermetallic compound belonging to the family of narrow-gap semiconductors and semimetals. This material is primarily investigated in thermoelectric and optoelectronic research contexts, where bismuth-based compounds are valued for their potential in mid-infrared detection, thermal energy conversion, and low-dimensional electronic applications. Si1Bi3 represents an emerging material with research focus on quantum transport phenomena and band structure engineering, distinguishing it from more established semiconductors like silicon or gallium arsenide in niche high-performance thermal and optical domains.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00180 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.4250 | eV/atom | — |