SiBiO₃ is a bismuth silicate ceramic compound belonging to the family of mixed-metal oxide semiconductors. This material is primarily of research and developmental interest, investigated for potential applications in photocatalysis, optoelectronics, and solid-state devices where bismuth-containing oxides offer tunable band gaps and enhanced visible-light absorption compared to conventional silicates. The bismuth incorporation modifies the electronic structure relative to pure silica, making it a candidate for next-generation semiconducting ceramics, though industrial adoption remains limited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00610 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.575 | eV/atom | — |