Si0.9Ge0.1

semiconductor

· Si0.9Ge0.1

Si₀.₉Ge₀.₁ is a silicon-germanium alloy containing 10% germanium, belonging to the IV-IV semiconductor family used primarily in high-speed and high-frequency electronic devices. This material is widely employed in heterojunction bipolar transistors (HBTs), RF amplifiers, and integrated circuits where superior carrier mobility and thermal performance are required compared to pure silicon. The germanium addition enhances electron and hole mobility while maintaining compatibility with silicon processing technology, making it particularly valuable for applications demanding low-noise operation and high-frequency performance in telecommunications and aerospace electronics.

RF power amplifiersheterojunction bipolar transistors (HBTs)high-frequency integrated circuitsspace/satellite communicationscellular base station electronicsmillimeter-wave devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Band Gap(Eg)	1.040	eV	—
Electrical Conductivity(σ)	480.8	S/cm	127°C
Electrical Resistivity(ρe)	0.0000208	Ω·m	127°C
Thermoelectric Power Factor(PF)	0.00177	W/(m·K²)	127°C
Seebeck Coefficient(S)	192	μV/K	127°C

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Si0.9Ge0.1

Electrical Properties

Regulatory Screening

Environmental

Export Control