Si0.3Ge0.7

semiconductor

· Si0.3Ge0.7

Si₀.₃Ge₀.₇ is a silicon-germanium alloy semiconductor with a germanium-rich composition, engineered for optoelectronic and high-speed electronic applications where bandgap and lattice properties intermediate between pure Si and Ge are advantageous. This material is used in infrared detectors, photodiodes, and heterojunction bipolar transistors (HBTs) in telecommunications and imaging systems, where its narrow bandgap enables detection of longer wavelengths and higher carrier mobility compared to pure silicon. The specific Ge fraction (70%) makes it particularly suited for mid-wave infrared sensing and can be lattice-matched to Ge substrates, reducing defect density in epitaxial growth compared to lattice-mismatched alternatives.

infrared photodetectorshigh-speed transistorstelecommunications HBTsthermal imaging sensorsheterojunction devicesquantum well structures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8800	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Si0.3Ge0.7

Electrical Properties

Regulatory Screening

Environmental

Export Control