Si0.347Ge0.653

semiconductor

· Si0.347Ge0.653

Si₀.₃₄₇Ge₀.₆₅₃ is a silicon-germanium alloy semiconductor with a germanium-rich composition, belonging to the IV-IV group of compound semiconductors. This material is engineered for optoelectronic and high-speed electronic applications where the bandgap and lattice properties of the Si-Ge system are tailored through composition control. The germanium-dominant ratio makes it particularly relevant for infrared detection, heterojunction bipolar transistors (HBTs), and direct bandgap photonics applications where pure silicon falls short, while maintaining some of the manufacturing compatibility and thermal stability advantages of the silicon platform.

infrared photodetectorsheterojunction bipolar transistorshigh-speed integrated circuitswaveguide couplersthermal imaging sensorsquantum well structures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.910	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Si0.347Ge0.653

Electrical Properties

Regulatory Screening

Environmental

Export Control