Si0.12Ge0.88
semiconductorSi₀.₁₂Ge₀.₈₈ is a silicon-germanium alloy with high germanium content, belonging to the IV-IV semiconductor family used primarily in optoelectronic and high-speed electronic devices. This composition is engineered to achieve specific bandgap and lattice properties intermediate between pure germanium and silicon, making it valuable for infrared detection, photodiodes, and heterojunction bipolar transistors (HBTs) where performance at wavelengths beyond silicon's range is required. The high Ge fraction positions this alloy for applications demanding enhanced carrier mobility and thermal stability compared to Si-rich SiGe variants, though it represents a specialized research-grade or production material rather than a commodity semiconductor.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |