Si0.08Ge0.92

semiconductor
· Si0.08Ge0.92

Si₀.₀₈Ge₀.₉₂ is a silicon-germanium alloy with a high germanium content (92%), belonging to the IV-IV semiconductor family. This material is primarily of research and development interest for high-speed and high-frequency optoelectronic devices, where the germanium-rich composition enables bandgap engineering and improved carrier mobility compared to pure germanium or silicon. Si₀.₀₈Ge₀.₉₂ is used in advanced integrated circuits, heterojunction bipolar transistors (HBTs), and photodetectors operating in the infrared and near-infrared regions, offering advantages in noise performance and frequency response for telecommunications and imaging applications where silicon-germanium engineered bandstructures provide performance advantages over single-element semiconductors.

heterojunction bipolar transistors (HBTs)high-frequency integrated circuitsinfrared photodetectorsoptoelectronic devicesbandgap-engineered semiconductorsadvanced wireless communications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Band Gap(Eg)
eV
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

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Si0.08Ge0.92 — Properties & Data | MatWorld