Si0.08Ge0.92

semiconductor

· Si0.08Ge0.92

Si₀.₀₈Ge₀.₉₂ is a silicon-germanium alloy with a high germanium content (92%), belonging to the IV-IV semiconductor family. This material is primarily of research and development interest for high-speed and high-frequency optoelectronic devices, where the germanium-rich composition enables bandgap engineering and improved carrier mobility compared to pure germanium or silicon. Si₀.₀₈Ge₀.₉₂ is used in advanced integrated circuits, heterojunction bipolar transistors (HBTs), and photodetectors operating in the infrared and near-infrared regions, offering advantages in noise performance and frequency response for telecommunications and imaging applications where silicon-germanium engineered bandstructures provide performance advantages over single-element semiconductors.

heterojunction bipolar transistors (HBTs)high-frequency integrated circuitsinfrared photodetectorsoptoelectronic devicesbandgap-engineered semiconductorsadvanced wireless communications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7200	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Si0.08Ge0.92

Electrical Properties

Regulatory Screening

Environmental

Export Control