Si0.0645Ge0.9355

Si0.0645Ge0.9355 is a germanium-rich silicon-germanium (SiGe) alloy containing approximately 6.5% silicon and 93.5% germanium. This material belongs to the IV-IV semiconductor family and is primarily used in high-frequency and high-power optoelectronic devices where germanium's narrow bandgap and superior carrier mobility provide advantages over pure silicon. The high germanium content makes this alloy particularly valuable for infrared detectors, heterojunction bipolar transistors (HBTs), and photodiodes operating at wavelengths where germanium excels; the small silicon fraction is typically added to engineer bandgap, lattice matching, and thermal properties for improved device performance and reliability compared to pure germanium.