Si0.0645Ge0.9355

semiconductor
· Si0.0645Ge0.9355

Si0.0645Ge0.9355 is a germanium-rich silicon-germanium (SiGe) alloy containing approximately 6.5% silicon and 93.5% germanium. This material belongs to the IV-IV semiconductor family and is primarily used in high-frequency and high-power optoelectronic devices where germanium's narrow bandgap and superior carrier mobility provide advantages over pure silicon. The high germanium content makes this alloy particularly valuable for infrared detectors, heterojunction bipolar transistors (HBTs), and photodiodes operating at wavelengths where germanium excels; the small silicon fraction is typically added to engineer bandgap, lattice matching, and thermal properties for improved device performance and reliability compared to pure germanium.

infrared photodetectorsheterojunction bipolar transistors (HBTs)high-frequency RF integrated circuitsavalanche photodiodesthermal imaging sensorsoptoelectronic integrated circuits

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.