Si0.03Ge0.97

semiconductor
· Si0.03Ge0.97

Si0.03Ge0.97 is a silicon-germanium alloy with very high germanium content (97%), forming a narrow-bandgap semiconductor material that sits near the germanium-rich end of the SiGe compositional spectrum. This material is primarily of research and specialized device interest, used in high-frequency optoelectronic and infrared detection applications where the bandgap engineering of SiGe alloys enables wavelength tuning. The high germanium fraction makes it attractive for infrared photodetectors, heterojunction bipolar transistors (HBTs), and focal plane arrays operating in the mid-to-long wavelength infrared region, where it offers improved responsivity and thermal performance compared to pure silicon or more silicon-rich SiGe compositions.

infrared photodetectorsthermal imaging sensorsheterojunction bipolar transistorsfocal plane arrayshigh-frequency optoelectronicsresearch semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
—
eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.