Si0.03Ge0.97

Si0.03Ge0.97 is a silicon-germanium alloy with very high germanium content (97%), forming a narrow-bandgap semiconductor material that sits near the germanium-rich end of the SiGe compositional spectrum. This material is primarily of research and specialized device interest, used in high-frequency optoelectronic and infrared detection applications where the bandgap engineering of SiGe alloys enables wavelength tuning. The high germanium fraction makes it attractive for infrared photodetectors, heterojunction bipolar transistors (HBTs), and focal plane arrays operating in the mid-to-long wavelength infrared region, where it offers improved responsivity and thermal performance compared to pure silicon or more silicon-rich SiGe compositions.