Se₄Nb₄I₄ is a mixed-halide niobium selenide compound belonging to the family of layered transition metal chalcohalides, which are emerging semiconductor materials with low-dimensional crystal structures. This material is primarily of research interest for next-generation optoelectronic and energy conversion applications, where its tunable bandgap, potential for strong light-matter interaction, and layered geometry make it attractive as an alternative to conventional semiconductors; however, it remains in early-stage development with limited commercial deployment and is less established than mature semiconductors like Si or GaAs.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9776 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7580 | eV/atom | — |