ScZrO2N
semiconductorScZrO2N is an experimental oxynitride ceramic compound combining scandium, zirconium, oxygen, and nitrogen phases, belonging to the family of advanced refractory and electronic ceramics. This material is primarily of research interest for high-temperature structural applications and semiconductor/photocatalytic devices, where the incorporation of nitrogen into zirconia-based systems can modulate band gap, enhance mechanical properties, or improve catalytic activity compared to conventional zirconia ceramics. The specific composition and processing routes remain under development, making this a promising candidate for next-generation thermal barriers, electrochemical devices, or photofunctional coatings in specialized industrial environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |