ScSnO2N
semiconductor· ScSnO2N
ScSnO2N is an experimental oxynitride semiconductor compound combining scandium, tin, oxygen, and nitrogen—a material class designed to explore wide bandgap and mixed-anion chemistry for next-generation electronic and photonic devices. Research in this material family targets high-temperature electronics, transparent conductors, and wide-bandgap power semiconductors where conventional oxides or nitrides alone show limitations. Its development reflects ongoing efforts to engineer bandgap, carrier mobility, and thermal stability through compositional tuning; practical industrial deployment remains largely in the research phase.
Wide-bandgap semiconductors (R&D)High-temperature electronics (experimental)Transparent conducting films (research)Power device substrates (exploratory)Photonic/UV optoelectronics (emerging)Thin-film materials research
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.