ScSnO2N

semiconductor

· ScSnO2N

ScSnO2N is an experimental oxynitride semiconductor compound combining scandium, tin, oxygen, and nitrogen—a material class designed to explore wide bandgap and mixed-anion chemistry for next-generation electronic and photonic devices. Research in this material family targets high-temperature electronics, transparent conductors, and wide-bandgap power semiconductors where conventional oxides or nitrides alone show limitations. Its development reflects ongoing efforts to engineer bandgap, carrier mobility, and thermal stability through compositional tuning; practical industrial deployment remains largely in the research phase.

Wide-bandgap semiconductors (R&D)High-temperature electronics (experimental)Transparent conducting films (research)Power device substrates (exploratory)Photonic/UV optoelectronics (emerging)Thin-film materials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.300	eV	—
Magnetic Moment(μB)	-0.000735	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ScSnO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control