ScInO3 is a ternary oxide semiconductor compound combining scandium, indium, and oxygen in a perovskite-related crystal structure. This material is primarily of research and developmental interest rather than established commercial production, being investigated for wide-bandgap semiconductor applications where high thermal stability and electrical properties are desirable. The scandium-indium oxide system represents an emerging platform for next-generation power electronics, optoelectronics, and high-temperature device applications, with particular appeal for applications requiring superior performance compared to conventional oxides like Al₂O₃ or In₂O₃.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.265 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 3.175 | eV | — | ||
| ↳ | 3.200 | eV | — | ||
| ↳ | 2.401 | eV | — | ||
Magnetic Moment(μB)3 entries | 0.000 | μB | — | ||
| ↳ | -0.0000640 | μB | — | ||
| ↳ | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.07020 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -2.677 | eV/atom | — | ||
| ↳ | 0.7000 | eV/atom | — | ||
| ↳ | -2.689 | eV/atom | — |