ScInO2S

semiconductor

· ScInO2S

ScInO2S is a ternary oxide-sulfide semiconductor compound combining scandium, indium, oxygen, and sulfur. This is an experimental material under active research rather than an established commercial compound; it belongs to the family of mixed-anion semiconductors being investigated for optoelectronic and photovoltaic applications where bandgap engineering and light absorption properties can be tuned through composition control. Research interest in such materials centers on potential advantages in thin-film solar cells, photodetectors, and visible-light photocatalysis where conventional binary semiconductors have limitations.

experimental thin-film photovoltaicsoptoelectronic device researchphotocatalytic coatingsphotodetector developmentbandgap-engineered semiconductorsemerging solar cell materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.200	eV	—
Magnetic Moment(μB)	-0.000113	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.100	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ScInO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control