ScGaO3 is a ternary oxide semiconductor compound combining scandium, gallium, and oxygen, belonging to the family of wide-bandgap oxides. This material is primarily investigated in research settings for optoelectronic and high-temperature semiconductor applications, where its structural stability and electronic properties offer potential advantages over conventional semiconductors in extreme environments. As a relatively early-stage compound, ScGaO3 represents part of the broader exploration into mixed-cation oxide semiconductors for next-generation power electronics, UV photonics, and high-temperature integrated circuits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 28,929.2 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.3100 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 12,654.5 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1899 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)4 entries | 1.582 | eV | DFT · PBE | ||
| ↳ | 4.600 | eV | DFT · GLLB-SC | ||
| ↳ | 2.867 | eV | DFT · OptB88vdW | ||
| ↳ | 4.655 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 4.524 | - | DFT · OptB88vdW | ||
| ↳ | 3.833 | - | DFT · TBmBJ | ||
Magnetic Moment(μB)3 entries | 0.000 | μB | DFT | ||
| ↳ | -0.0000604 | μB | DFT | ||
| ↳ | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 0.000 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.05430 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)3 entries | -2.283 | eV/atom | DFT | ||
| ↳ | 0.4200 | eV/atom | DFT | ||
| ↳ | -2.854 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data