ScGaO3 is a ternary oxide semiconductor compound combining scandium, gallium, and oxygen, belonging to the family of wide-bandgap oxides. This material is primarily investigated in research settings for optoelectronic and high-temperature semiconductor applications, where its structural stability and electronic properties offer potential advantages over conventional semiconductors in extreme environments. As a relatively early-stage compound, ScGaO3 represents part of the broader exploration into mixed-cation oxide semiconductors for next-generation power electronics, UV photonics, and high-temperature integrated circuits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 199.5 | GPa | — | ||
Poisson's Ratio(ν) | 0.3100 | - | — | ||
Shear Modulus(G) | 87.25 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.256 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.582 | eV | — | ||
| ↳ | 4.600 | eV | — | ||
| ↳ | 4.331 | eV | — | ||
Magnetic Moment(μB)3 entries | 0.000 | μB | — | ||
| ↳ | -0.0000604 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -179.9 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.05430 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -2.283 | eV/atom | — | ||
| ↳ | 0.4200 | eV/atom | — | ||
| ↳ | -2.854 | eV/atom | — |