ScGaO2S

semiconductor

· ScGaO2S

ScGaO2S is a mixed-anion semiconductor compound combining scandium, gallium, oxygen, and sulfur—a research-stage material belonging to the family of oxysulfide semiconductors. This material is under investigation for optoelectronic and photocatalytic applications where the combination of oxide and sulfide components can tune bandgap and carrier dynamics compared to single-anion alternatives. Current interest is concentrated in academic and exploratory device development rather than established industrial production.

photocatalytic water splittingUV-visible photodetectorsthin-film optoelectronicsphotovoltaic researchmaterials research and developmentnext-generation semiconductor devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.500	eV	—
Magnetic Moment(μB)	0.0000180	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ScGaO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control