ScAlN3 is a ternary nitride compound containing scandium, aluminum, and nitrogen, representing an emerging material in the wide-bandgap semiconductor and refractory ceramic family. This is primarily a research-stage material being investigated for its potential in high-temperature applications and advanced electronic devices, where the combination of scandium doping in aluminum nitride is expected to offer enhanced thermal stability, improved bandgap engineering, or superior mechanical properties compared to conventional binary AlN systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.00216 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.300 | eV/atom | — |