Sc3 In1 N1

semiconductor

· Sc3 In1 N1

Sc₃In₁N₁ is an experimental III-nitride semiconductor compound combining scandium, indium, and nitrogen. This material belongs to the wide-bandgap nitride family and is primarily of research interest for exploring novel band structure and electronic properties not achievable in binary nitride systems (GaN, InN, AlN). While not yet in commercial production, ternary nitride compositions like this are investigated for potential high-power and high-frequency device applications where the tunable electronic properties of multi-element nitride systems could enable improved performance over established alternatives.

Research semiconductorsWide-bandgap device developmentHigh-power electronics (potential)RF/microwave devices (exploratory)Next-generation nitride systems

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	16,021.9	ksi	—
Shear Modulus(G)	12,014.9	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.03200	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.225	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Sc3 In1 N1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control