Sc3In1B1 is an experimental intermetallic semiconductor compound combining scandium, indium, and boron. This material belongs to the rare-earth intermetallic family and represents research-stage development rather than a commercially established semiconductor; it is of interest in materials science for understanding how rare-earth elements can be incorporated into boride-based semiconducting systems. Potential applications lie in advanced electronics and optoelectronics where rare-earth doping offers opportunities for band-gap engineering, though this specific composition requires further characterization before industrial adoption.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11,501.5 | ksi | — | ||
Shear Modulus(G) | 7,788.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.05090 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4310 | eV/atom | — |