Sc₂Ga₂O₆ is an oxide semiconductor compound combining scandium and gallium, belonging to the family of wide-bandgap semiconductors. This material is primarily of research and developmental interest rather than established commercial use, with potential applications in high-temperature electronics, optoelectronic devices, and radiation-hard components where the wide bandgap and thermal stability of oxide semiconductors offer advantages over conventional silicon or gallium nitride-based systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 190.3 | GPa | — | ||
Shear Modulus(G) | 86.25 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.867 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.894 | eV/atom | — |