Sc1As1 is a binary III-V semiconductor compound composed of scandium and arsenic, belonging to the family of wide-bandgap semiconductors. This material is primarily of research and developmental interest rather than established in mass production, with potential applications in high-temperature and high-power electronic devices where the wide bandgap and robust mechanical properties could provide advantages over conventional semiconductors. The combination of a rare earth element (scandium) with arsenic creates a compound with interesting electronic and thermal characteristics for specialized semiconductor applications in extreme operating conditions.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12,826.1 | ksi | — | ||
Shear Modulus(G) | 8,757.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2659 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.446 | eV/atom | — |