SbZrO2N
semiconductorSbZrO₂N is an experimental oxynitride semiconductor combining antimony, zirconium, oxygen, and nitrogen in a mixed-anion crystal structure. This material belongs to the emerging class of oxynitride semiconductors, which are primarily investigated in research settings for photocatalytic and optoelectronic applications where tunable band gaps and improved visible-light absorption are desired compared to traditional oxide semiconductors. The incorporation of nitrogen into the zirconium oxide lattice modifies electronic structure, making it of interest for solar energy conversion, environmental remediation, and next-generation semiconductor device development, though practical engineering applications remain largely in the demonstration phase.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |