SbTeOs is a quaternary semiconductor compound combining antimony, tellurium, oxygen, and sulfur—a material from the chalcogenide family with potential for optoelectronic and photonic applications. This composition sits at the intersection of telluride semiconductors and oxide-sulfide systems, making it a research-focused material for applications requiring tailored bandgaps and optical properties. Engineers would consider this material for specialized photonic devices, infrared detectors, or phase-change memory systems where the combined elemental chemistry offers property tuning not available in binary or ternary alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 118.9 | GPa | — | ||
Poisson's Ratio(ν) | 0.2300 | - | — | ||
Shear Modulus(G) | 80.69 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 10.53 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.05000 | eV | — | ||
| ↳ | 0.8340 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00150 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.07121 | eV/atom | — |