SbTaOFN is an experimental mixed-metal oxynitride semiconductor containing antimony, tantalium, oxygen, and nitrogen. This compound belongs to the family of non-oxide ceramics and nitride-based semiconductors, which are being investigated for advanced photocatalytic and optoelectronic applications where bandgap engineering and visible-light activity are critical. The combination of multiple metallic cations allows tuning of electronic structure and is relevant to researchers developing next-generation photocatalysts, photoelectrodes, and potentially wide-bandgap semiconductor devices, though industrial adoption remains limited and the material is primarily in early-stage research.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2000 | eV | — | ||
Magnetic Moment(μB) | 3.211e-11 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.7600 | eV/atom | — |