SbSnO2N

semiconductor
· SbSnO2N

SbSnO₂N is an experimental oxynitride semiconductor compound combining antimony, tin, oxygen, and nitrogen elements. This material belongs to the broader class of mixed-anion semiconductors being researched for next-generation optoelectronic and photocatalytic applications, where the incorporation of nitrogen into oxide frameworks can modify bandgap and electronic properties compared to conventional oxide semiconductors. While not yet commercialized at scale, materials in this family are investigated for photocatalysis, visible-light absorption, and potential thin-film device applications where tunable electronic properties and chemical stability are required.

photocatalytic materials (research)visible-light absorbersthin-film semiconductorswater treatment (photocatalysis)optoelectronic devices (experimental)bandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Band Gap(Eg)
eV
Magnetic Moment(μB)
μB
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
eV/atom
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.