SbSnO2N

semiconductor

· SbSnO2N

SbSnO₂N is an experimental oxynitride semiconductor compound combining antimony, tin, oxygen, and nitrogen elements. This material belongs to the broader class of mixed-anion semiconductors being researched for next-generation optoelectronic and photocatalytic applications, where the incorporation of nitrogen into oxide frameworks can modify bandgap and electronic properties compared to conventional oxide semiconductors. While not yet commercialized at scale, materials in this family are investigated for photocatalysis, visible-light absorption, and potential thin-film device applications where tunable electronic properties and chemical stability are required.

photocatalytic materials (research)visible-light absorbersthin-film semiconductorswater treatment (photocatalysis)optoelectronic devices (experimental)bandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6000	eV	—
Magnetic Moment(μB)	-0.000374	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.9600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

SbSnO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control