SbSBr is a layered semiconductor compound belonging to the family of mixed chalcogenide-halide materials, combining antimony, sulfur, and bromine in a crystalline structure. While primarily investigated in research settings rather than established industrial production, this material is of interest for its potential as a two-dimensional semiconductor due to its layered nature and moderate mechanical properties. Engineers may consider SbSBr for emerging optoelectronic and nanoelectronic applications where layer-dependent properties and band-gap engineering are advantageous over conventional bulk semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 23.67 | GPa | — | ||
Exfoliation Energy(Eexf) | 124.4 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2900 | - | — | ||
Shear Modulus(G) | 12.28 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.753 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 2.220 | eV | — | ||
| ↳ | 2.170 | eV | — | ||
| ↳ | 1.710 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 139.9 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -178 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00810 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5068 | eV/atom | — |