SbPbIO2 is an experimental mixed-metal oxide semiconductor containing antimony, lead, and iodine. This compound belongs to the family of halide perovskites and related oxide semiconductors under investigation for optoelectronic applications, particularly where tunable bandgap and high atomic number elements offer advantages in light absorption or radiation detection. Research interest in such materials stems from their potential in photovoltaics, X-ray detectors, and scintillation applications, though SbPbIO2 remains primarily a laboratory compound without widespread commercial deployment.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2687 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 2.480 | eV | Measured | ||
| ↳ | 1.689 | eV | DFT · OptB88vdW | ||
| ↳ | 2.101 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 8.305 | - | DFT · OptB88vdW | ||
| ↳ | 6.575 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 20.82 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -1.198 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data